1 item symbol rating unit drain-source voltage v ds 800 continuous drain current i d 7 pulsed drain current i d(puls] 28 gate-source voltage v gs 35 maximum avalanche energy e av *1 378.3 max. power dissipation p d 60 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3264-01MR fuji power mos-fet n-channel silicon power mos-fet equivalent circuit schematic maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) gate(g) source(s) drain(d) item symbol test conditions zero gate voltage drain current i dss v ds =800v v gs =35v i d =3.5a v gs =10v i d =3.5a v ds =25v v cc =600v i d =7a v gs =10v r gs =10 ? min. typ. max. units v v a ma na ? s pf a v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 2.083 62.5 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =1ma v gs =0v i d =1ma v ds =v gs tch=25c v gs =0v tch=125c v ds =0v v ds =25v v gs =0v f=1mhz l=14.2mh t ch =25c i f =2xid v gs =0v t ch =25c i f =id v gs =0v -di/dt=100a/s t ch =25c v a a v mj w c c *1 l=14.2mh, vcc=80v 800 3.5 4.0 4.5 10 500 0.2 1.0 10 100 1.62 2.0 2.0 4.0 900 1350 130 200 70 110 25 40 90 140 80 120 50 80 7 1.0 1.5 900 10 -55 to +150 to-220f15 3. source 2.54 features high speed switching low on-resistance no secondary breakdown low driving power high voltage v gs = 30v guarantee avalanche-proof applications switching regulators ups dc-dc converters general purpose power amplifier
2 characteristics 2SK3264-01MR fuji power mosfet typical drain-source on state resistance vs. i d rds(on)=f(id):80s pulse test, tch=25c r ds(on) [ ? ] 0 5 10 15 20 15 10 5 0 vgs= 5v 0 10203040 0 5 10 15 20 5v 5.5v 7v 6.5v 6v 8v 10v vgs=20v vds [v] id [a] typical output characteristics id=f(vds):80 s pulse test,tc=25 o c -50 0 50 100 150 0 2 4 6 max. typ. drain-source on-state resistance rds(on)=f(tch):id=3.5a,vgs=10v rds(on) [ ? ] tch [ o c ] 012345678910 10 -2 10 -1 10 0 10 1 typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 o c id [a] vgs [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 typical forward transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 o c gfs [s] id [a] -50 0 50 100 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 min. typ. max. gate threshold voltage vgs(th)=f(tch):id=1ma,vds=vgs vgs(th) [v] tch [ o c ]
3 fuji power mosfet 2SK3264-01MR 10 -2 10 -1 10 0 10 1 10 2 10p 100p 1n 10n crss coss ciss typical capacitances c=f(vds):vgs=0v,f=1mhz c [f] vds [v] 0 20 40 60 80 100 120 140 160 0 100 200 300 400 500 600 700 800 vcc=160v 400v 640v 160v 400v vcc=640v vgs [v] vds [v] typical gate charge characteristic vgs=f(qg):id=7a,tc=25 o c qg [nc] 0 5 10 15 20 25 30 35 40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -2 10 -1 10 0 10 1 tch=25 o c typ. forward characteristic of reverse of diode if=f(vsd):80 s pules test,vgs=0v if [a] vsd [v] 0 50 100 150 0 10 20 30 40 50 60 70 power dissipation pd=f(tc) pd [w] tc [ o c ] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 safe operating area id=f(vds):d=0.01,tc=25 o c dc vds [v] id [a] t=1 s 100ms 10ms 1ms 100 s 10 s 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=t/t 0 0.01 0.02 0.05 0.1 0.2 d=0.5 zth(ch-c) [ o c/w] t [sec]
4 fuji power mosfet 2SK3264-01MR 0 50 100 150 0 100 200 300 400 avalanche energy derating eas=f(starting tch):vcc=80v,i av =7a eas [mj] starting tch [ o c ]
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